1. SE Resolution: ≤0.6 nm @ 2 kV; ≤0.7 nm @ 1 kV 2. Landing Voltage of Electron Beam: 20 V ~ 30 kV 3. Acceleration Voltage of Ion Beam: 500 V ~ 30 kV 4. Probe Current of Ion Beam: 0.1 pA ~ 65 nA 5. FIB Resolution: 2.5 nm @ 30 kV 6. Deposition Materials and Etching Gas: Pt, C, TEOS, W and XeF2 7. Nanomanipulator 8. Transfer Holder to Protect Samples from Oxidation by Air |
